5 0.05 30 sr330l sr340l sr345l sr350l sr360l sr380l sr3100lsr3150lSR3200L 3.0a low vf sc hottky barrier diode low vf schottk y barrier chip 3.0 a unit characteri s tic symbol 80 a v 350 pf 25 c/w -55 to +150 c sr330l ? SR3200L features ! ! g uard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanic al d ata ! cas e: do -201ad, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rm s reverse voltage v r(rm s) av erage rectified output current @t l = 75 c (not e 1) i o non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm forward v o ltage @i f = 3 . 0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 0.5 10 ma t y pical junction capacitance (note 2) c j t y pical thermal resistance (note 1) r ja operat i ng and storage temperature range t j , t stg note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 sr330l ? SR3200L v 0. 45 0.5 0.6 0.85 v 21 40 28 45 31.5 50 35 60 42 80 56 100 70 150 105 200 140 z ibo seno electronic engineering co., ltd. www.senocn.com 500 do-201 a d dim m in max a 25.4 ? b 8. 50 9. 50 c 1. 20 1.30 d 5. 0 5. 60 all d i mensions in mm do-201 a d dim m in max a 24.5 ? b 7.20 9. 50 c 1. 10 1.30 d 5. 00 5. 60 all d i mensions in mm a l l d a t a s h e e t
0 16 32 48 64 80 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-w ave (jedec method) t = 100 c j 10 100 1000 0.1 11 0 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r f=1.0mhz t = 25 c j 0 20 40 60 80 100 120 140 i,instantaneousreversecurrent(ma) r percent of ra ted peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 1k 0 0.5 1.0 25 50 75 100 125 150 i a verage forward current (a) o, t , lead temperature ( c) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0 2 of 2 sr330l ? SR3200L sr330l ? SR3200L z ibo seno electronic engineering co., ltd. www.senocn.com 5.0 10 in stantaneous forward current, (a) instantaneous forward voltage, (v) 1.0 0.1 0.1 0.2 0.5 0.3 0.6 0.9 0.4 0.7 0.8 1.0 s r 380l - 3100l t a = 25 5200l 3150l sr - sr330l-340l sr fig. 2 350l-360l a l l d a t a s h e e t
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